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Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
MAXIMUM
MAXIMUM RATINGS
Characteristic Symbol Unit
GM2907 GM2907A
Collector-Emitter Voltage
VCEO -40 -60 Vdc
-
Collector-Base Voltage
VCBO -60 -60 Vdc
-
Emitter-Base Voltage
VEBO -5.0 -5.0 Vdc
-
Collector Current-Continuous
Ic -600 -600 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
PD 225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation 300 mW
PD
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM2907=M2B;GM2907A=2F
GM2907=M2B;GM 907A=
B;GM2 A=2F
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage(3) V(BR)CEO GM2907 -30 --
Vdc
-(Ic=-10mAdc,IB=0) GM2907A -60 --
Collector-Base Breakdown Voltage
V(BR)CBO -60 __ Vdc
-(Ic=-10Adc,IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO -5.0 -- Vdc
-(IE=-10Adc,Ic=0)
Collector Cutoff Current
ICEX -- -50 nAdc
(VCE=-30Vdc, VEB(Off)=-0.5Vdc)
Collector Cutoff Current ICBO
(VCB=-50Vdc,IE=0) GM2907 -- -0.02
GM2907A -- -0.01
(VCB=-50Vdc,IE=0,TA=125) GM2907 -- -20.0
GM2907A -- -10.0 Adc
Base Cutoff Current
IB -- -50 nAdc
(VCE=-30Vdc, VEB(Off)=-0.5Vdc)
DC Current Gain HFE --
GM2907 35
(Ic=-0.1mAdc,VCE=-10.0Vdc) --
GM2907A 75
GM2907 50
(Ic=-1.0mAdc,VCE=-10.0Vdc) --
GM2907A 100
GM2907 75
(Ic=-10mAdc,VCE=-10.0Vdc) --
GM2907A 100
(Ic=-150mAdc,VCE=-10.0Vdc)(3) 100 300
GM2907 30 --
(Ic=-500mAdc,VCE=-10.0Vdc)(3)
GM2907A 50 --
Collector-Emitter Saturation Voltage
(Ic=-150mAdc, IB=-15mAdc) VCE(sat) -- -0.4 Vdc
(Ic=-500mAdc, IB=-50mAdc) -- -1.6
Base-Emitter Saturation Voltage
(Ic=-150mAdc, IB=-15mAdc) VBE(sat) -- -1.3 Vdc
(Ic=-500mAdc, IB=-50mAdc) -- -2.6
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
SMALL-SIGNAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Current-Gain-Bandwidth Product
fT 200 -- MHz
(Ic=-50mAdc,VCE=-20Vdc,f=100MHz)
Output Capacitance
Cobo -- 80 pF
(VCB=-10.0Vdc, IE=0, f=1.0MHz)
Input Capacitance
Cibo -- 30 pF
(VEB=-2.0Vdc, IC=0, f=1.0MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
ton -- 45
Delay Time (Vcc=-30Vdc
td -- 10 ns
Ic=-150mAdc,IB1=-15mAdc)
Rise Time
tr -- 40
Turn-Off time
toff -- 100
Storage Time (Vcc=-6.0Vdc,Ic=-150mAdc,
ts -- 80 ns
IB1=IB2=-15mAdc)
Fall Time
tf -- 30
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