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mmbt3906


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                  Guilin Strong Micro-Electronics Co.,Ltd.
GM3906




MAXIMUM          RATINGS 

Characteristic                           Symbol           Rating             Unit
                                                                             
Collector-Emitter Voltage
                                         VCEO              -40               Vdc
-
Collector-Base Voltage
                                         VCBO              -40               Vdc
-

Emitter-Base Voltage
                                         VEBO              -6.0              Vdc
-

Collector Current-Continuous
                                           Ic              -200             mAdc
-

THERMAL          CHARACTERISTICS 

Characteristic                                  Symbol     Max               Unit
                                                                             
Total Device Dissipation                                     225             mW
FR-5 Board(1)                                     PD
TA=25 25                                                     1.8            mW/
Derate above25  25
Total Device Dissipation                                     300             mW
Alumina Substrate, (2)                            PD
TA=25 25                                                     2.4            mW/
Derate above25  25
Thermal Resistance Junction to Ambient          RJA          417             /W

Junction and Storage Temperature                TJ,Tstg           150, -55to+150


DEVICE           MARKING 

GM3906
GM3906=2A
 HFE(1)GM3906(100~200), GM3906(100~300)
    (1)GM3906(100~200 GM3906(100~30
                 ~200),           ~300)
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GM3906

ELECTRICAL        CHARACTERISTICS 
(TA=25
    25 unless otherwise noted  25)

OFF    CHARACTERISTICS 
Characteristic                            Symbol    Min     Max     Unit
                                                                    
Collector-Emitter Breakdown Voltage(3)   V(BR)CEO   -40      --     Vdc
-(Ic=-1.0mAdc,IB=0)
Collector-Base Breakdown Voltage         V(BR)CBO   -40      --     Vdc
-(Ic=-10Adc,IE=0)
Emitter-Base Breakdown Voltage           V(BR)EBO   -6.0     --     Vdc
-(IE=-10Adc,Ic=0)
Base Cutoff Current                        IBEX      --     -50     nAdc
(VCE=-30Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current                   ICEX      --     -50     nAdc
(VCE=-30Vdc, VEB =-3.0Vdc)


ON    CHARCTERISTICS(2)
      CHARCTERISTICS(2)
Characteristic                            Symbol    Min     Max     Unit
                                                                    
DC Current Gain                            hPE                       --
(Ic=-0.1mAdc,VCE=-1.0Vdc)                            40      --
(Ic=-1.0mAdc,VCE=-1.0Vdc)                            70      --
(Ic=-10mAdc,VCE=-1.0Vdc)                            100     300
(Ic=-50mAdc,VCE=-1.0Vdc)                             60      --
(Ic=-100mAdc,VCE=-1.0Vdc)                            30      --
Collector-Emitter Saturation Voltage
-
                                         VCE(sat)                   Vdc
(Ic=-10mAdc, IB=-1.0mAdc)                            --     -0.25
(Ic=-50mAdc, IB=-5.0mAdc)                            --      -0.4
Base-Emitter Saturation Voltage

                                         VBE(sat)                   Vdc
(Ic=-10mAdc, IB=-1.0mAdc)                           -0.65   -0.85
(Ic=-50mAdc, IB=-5.0mAdc)                            --     -0.95
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GM3906


SMALL-SIGNAL        CHARACTERISTICS 
Characteristic                                 Symbol   Min   Max   Unit
                                                                    
Current-Gain-Bandwidth Product
-
(Ic=-10mAdc,VCE=-20Vdc,f=100MHz)                  fT    300    --   MHz
Output Capacitance 
(VCB=-5.0Vdc, IE=0, f=1.0MHz)                    Cobo    --   4.0    pF
Input Capacitance 
(VEB=-0.5Vdc, IC=0, f=1.0MHz)                    Cibo    --   8.0    pF
Input Impedance 
(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)               hie   1.0    10    k
Voltage Feedback Ratio 
(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)               hre   0.5   8.0   



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