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mmbt5401


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                  Guilin Strong Micro-Electronics Co.,Ltd.
GM5401




MAXIMUM          RATINGS 

Characteristic                           Symbol             Rating        Unit
                                                                          
Collector-Emitter Voltage
                                          VCEO               -150          Vdc
-
Collector-Base Voltage
                                          VCBO               -160          Vdc
-
Emitter-Base Voltage
                                          VEBO               -5.0          Vdc
-
Collector Current--Continuous
                                           Ic                -500         mAdc
-

THERMAL          CHARACTERISTICS 
Characteristic                                   Symbol        Max          Unit
                                                                            
Total Device Dissipation                           PD
                                                                    225     mW
 FR-5 Board(1)
TA=25 25
                                                                    1.8    mW/
Derate above25  25
Thermal Resistance Junction to Ambient
                                                  RJA               556    /W

Total Device Dissipation                           PD               300     mW
Alumina Substrate (2) TA=25
Derate above25  25                                                  2.4    mW/
Thermal Resistance Junction to Ambient
                                                  RJA               417    /W

Junction and Storage Temperature
                                                  TJ,Tstg        150, -55to+150

DEVICE           MARKING 

GM5401=2L
                
                Guilin Strong Micro-Electronics Co.,Ltd.
GM5401
ELECTRICAL       CHARACTERISTICS 
(TA=25
    25 unless otherwise noted  25)
Characteristic                               Symbol    Min    Max    Unit
                                                                     
Collector-Emitter Breakdown Voltage(3)
                                            V(BR)CEO   -150    --    Vdc
-(Ic=-1.0mAdc,IB=0)
Collector-Base Breakdown Voltage
                                            V(BR)CBO   -160    --    Vdc
-(Ic=-100Adc,IE=0)
Emitter-Base Breakdown Voltage
                                            V(BR)EBO   -5.0    --    Vdc
(IE=-10Adc,Ic=0)
Emitter Cutoff Current
(VEB=-3.0Vdc,Ic=0)                            IEBO      --    -50    nAdc

Collector Cutoff Current
                                              ICBO      --    -50    nAdc
(VCB=-120Vdc,IE=0)
DC Current Gain                               HFE                     --
(Ic=-1.0mAdc,VCE=-5.0Vdc)                               50     --
(Ic=-10mAdc,VCE=-5.0Vdc)                                60    240
(Ic=-50mAdc,VCE=-5.0Vdc)                                30     --
Collector-Emitter Saturation Voltage
-
                                            VCE(sat)                 Vdc
(Ic=-10mAdc, IB=-1.0mAdc)                               --    -0.2
(Ic=-50mAdc, IB=-10mAdc)                                --    -0.5
Base-Emitter Saturation Voltage
-
(Ic=-10mAdc, IB=-1.0mAdc)                   VBE(sat)    --    -1.0   Vdc
(Ic=-50mAdc, IB=-5.0mAdc)                               --    -1.0
Current-Gain-Bandwidth Product -
(Ic=-10mAdc,VCE=-10Vdc,f=100MHz)               fT      100    300    MHz

Output Capacitance 
(VCB=-10.0Vdc, IE=0, f=1.0MHz)                Cobo      --    6.0     pF

Small-Signal Current Gain 
                                               hfe      40    200     --
(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)
Noise Figure 
                                              NF        --    8.0    dB
(VCE=-5.0Vdc, IC=-200Adc,Rs=1.0kf=1.0KHz)
FR-5=1.0



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