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mmbt5551


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                  Guilin Strong Micro-Electronics Co.,Ltd.
GM5551




MAXIMUM          RATINGS 
                 RATINGS

Characteristic                           Symbol           Rating        Unit
                                                                        
Collector Emitter Voltage
                                          VCEO             160          Vdc
-
Collector Base Voltage
                                          VCBO             180          Vdc
-
Emitter Base Voltage
                                          VEBO             5.0          Vdc
-
Collector Current--Continuous
                                           Ic              600          mAdc
-

THERMAL          CHARACTERISTICS 
Characteristic                             Symbol         Max           Unit
                                                                        
Total Device Dissipation 
                                                            225         mW
FR-5 Board(1)
                                                 PD
TA=25 25
                                                            1.8        mW/
Derate above25 25
Thermal Resistance Junction to Ambient
                                                RJA         556         /W

Total Device Dissipation                                    300         mW
Alumina Substrate ,(2)TA=25                      PD
Derate above25  25                                          2.4        mW/

Thermal Resistance Junction to Ambient
                                                RJA         417         /W

Junction and Storage Temperature
                                                TJ,Tstg      150, -55to+150

DEVICE           MARKING 

GM5551=G1
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GM5551
ELECTRICAL       CHARACTERISTICS 
(TA=25 unless otherwise noted  25)
Characteristic                               Symbol    Min   Max    Unit
                                                                    
Collector Emitter Breakdown Voltage(3)
                                            V(BR)CEO   160    --    Vdc
-(Ic=1.0mAdc,IB=0)
Collector Base Breakdown Voltage
                                            V(BR)CBO   180    --    Vdc
-(Ic=100Adc,IE=0)
Emitter-Base Breakdown Voltage
                                            V(BR)EBO   5.0    --    Vdc
-(IE=10Adc,Ic=0)
Emitter Cutoff Current
(VEB=4.0Vdc,Ic=0)                             IEBO      --    50    nAdc

Collector Cutoff Current
                                             ICBO       --    50    nAdc
(VCB=120Vdc,IE=0)
DC Current Gain                               HFE                    --
(Ic=1.0mAdc,VCE=5.0Vdc)                                 80    --
(Ic=10mAdc,VCE=5.0Vdc)                                  80   250
(Ic=50mAdc,VCE=5.0Vdc)                                  30    --
Collector-Emitter Saturation Voltage
-
(Ic=10mAdc, IB=1.0mAdc)                     VCE(sat)         0.15   Vdc
                                                        --
(Ic=50mAdc, IB=5.0mAdc)                                 --    0.2
Base-Emitter Saturation Voltage
-
                                            VBE(sat)    --   1.0    Vdc
(Ic=10mAdc, IB=1.0mAdc)
(Ic=50mAdc, IB=5.0mAdc)                                 --   1.0
Current-Gain-Bandwidth Product -
                                               fT      100   300    MHz
(Ic=-10mAdc,VCE=-10Vdc,f=100MHz)
Output Capacitance 
(VCB=-10.0Vdc, IE=0, f=1.0MHz)                Cobo      --   6.0     pF

Small-Signal Current Gain 
                                               hfe      40   200     --
(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)
Noise Figure 
                                              NF        --   8.0    dB
(VCE=-5.0Vdc, IC=-200Adc,Rs=1.0kf=1.0KHz)
FR-5=1.0



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