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mmbta92


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                Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93




MAXIMUM        RATINGS 

Characteristic                           Symbol                         Unit
                                                   GMA92     GMA93
                                                                        
Collector-Emitter Voltage
                                          VCEO        -300    -200      Vdc
-
Collector-Base Voltage
                                          VCBO        -300    -200      Vdc
-
Emitter-Base Voltage
                                          VEBO        -6.0    -6.0      Vdc

Collector Current-Continuous
                                           Ic         -500    -500     mAdc
-

THERMAL       CHARACTERISTICS 
Characteristic                                    Symbol     Max        Unit
                                                                        
Total Device Dissipation                            PD
                                                             225        mW
FR-5 Board(1)
TA=25 25
                                                              1.8      mW/
Derate above25 25
Total Device Dissipation                           PD
                                                             300        mW
Alumina Substrate ,(2)
TA=25 25
                                                              2.4      mW/
Derate above25 25
Thermal Resistance Junction to Ambient
                                                   RJA       417       /W

Junction and Storage Temperature
                                                  TJ,Tstg    150, -55to+150


DEVICE       MARKING 

GMA92=2D;GMA93=2E
                 
                 Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93
ELECTRICAL     CHARACTERISTICS 
   =25 unless otherwise noted  25)
(TA=25                                 )
Characteristic                 Symbol Min                  Max    Unit
                                                                  
                                         V(BR)CEO
Collector-Emitter Breakdown Voltage(3)
                                          GMA92     -300    --
-(Ic=-1.0mAdc,IB=0)
                                          GMA93     -200    --    Vdc
                                         V(BR)CBO
Collector-Base Breakdown Voltage
                                          GMA92     -300    --
-(Ic=-100Adc,IE=0)
                                          GMA93     -200    __    Vdc
Emitter-Base Breakdown Voltage
-(IE=-10Adc,Ic=0)                        V(BR)EBO   -5.0    --    Vdc
Emitter Cutoff Current 
(VEB=-3.0Vdc,Ic=0)                        IEBO      __     -100   nAdc
Collector Cutoff Current                  ICBO
(VCB=-200Vdc,IE=0)                       GMA92      --     -250
(VCB=-160Vdc,IE=0)                       GMA93      __     -250   nAdc
DC Current Gain                            HFE                     --
(Ic=-1.0mAdc,VCE=-10.0Vdc)                          25      --
(Ic=-10mAdc,VCE=-10.0Vdc)                           40     300
(Ic=-30mAdc,VCE=-10.0Vdc)                GMA92      25      --
                                         GMA93      25      __
Collector-Emitter Saturation Voltage     VCE(sat)
-                                        GMA92      --     -0.5
(Ic=-20mAdc, IB=-2.0mAdc)                GMA93      --     -0.5   Vdc
Base-Emitter Saturation Voltage
-
(Ic=-20mAdc, IB=-2.0mAdc)                VBE(sat)   --     -0.9   Vdc
Current-Gain-Bandwidth Product
-
(Ic=-10mAdc,VCE=-20Vdc,f=100MHz)           fT       50      __    MHz
                                          Ccb
Collector-Base Capacitance 
                                         GMA92      --     6.0     pF
(VCB=-20.0Vdc, IE=0, f=1.0MHz)
                                         GMA93      __     8.0
FR-5=1.0



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