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                Guilin Strong Micro-Electronics Co.,Ltd.


Excellent HFE Linearity HFE hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
Low Noise NF=1dB(Typ.),10db(Max.).
Complementary to GM9014  GM9014 

MAXIMUM        RATINGS (Ta=25) 

CHARACTERISTIC                        Symbol          Rating   Unit

Collector-Base Voltage
                                       VCBO             -50    Vdc

Collector-Emitter Voltage
                                       VCEO             -45    Vdc

Emitter-Base Voltage
                                       VEBO             -5.0   Vdc

Collector Current-Continuous
                                        Ic             -150    mAdc

Base Current
                                        IB              -30    mAdc

Collector Power Dissipation
                                        PC              225    mW

Junction Temperature
                                        Tj              150     

Storage Temperature Range
                                       Tstg          -55150     

                   Guilin Strong Micro-Electronics Co.,Ltd.

   =25 unless otherwise noted  25)
(TA=25                           )

Characteristic                         Symbol       Test Condition     Min Typ Max Unit

Collector Cutoff Current
                                         ICBO       VCB=-50V,IE=0       --    --    -0.1    A

Emitter Cutoff Current
                                         IEBO        VEB=-5V,IC=0       --    --    -0.1    A

Collector-Base Breakdown Voltage
                                       V(BR)CBO      IC=-100A           -50   --     --      V

Collector-Emitter Breakdown Voltage
                                       V(BR)CEO       IC=-1.0mA         -45   --     --      V

Emitter-Base Breakdown Voltage
                                       V(BR)EBO      IE=-100A           -5    --     --      V
DC Current Gain
                                         hFE       VCE=-6V,IC=-2mA     200    --    700     --

Collector-Emitter Saturation Voltage
                                       VCE(sat) IC=-100mA, IB=-5mA      --    --    -0.6     V

Base-Emitter Voltage
                                         VBE      VCE=-5.0V,IC=-10mA    --    --    -0.82    V

Transition Frequency
                                          fT      VCE=-5.0V,IC=-10mA   100    180    --     MHz

Collector Output Capacitance                        VCB=-10V,IE=0,
                                         Cob                            --    4.0   7.0     pF
            Guilin Strong Micro-Electronics Co.,Ltd.


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