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                                                                                                                                 November 1995



 2N7000 / 2N7002 / NDS7002A
 N-Channel Enhancement Mode Field Effect Transistor

General Description                                                                 Features

 These N-Channel enhancement mode field effect transistors                                High density cell design for low RDS(ON).
 are produced using Fairchild's proprietary, high cell density,                           Voltage controlled small signal switch.
 DMOS technology. These products have been designed to
 minimize on-state resistance while provide rugged, reliable,                             Rugged and reliable.
 and fast switching performance. They can be used in most
                                                                                          High saturation current capability.
 applications requiring up to 400mA DC and can deliver
 pulsed currents up to 2A. These products are particularly
 suited for low voltage, low current applications such as small
 servo motor control, power MOSFET gate drivers, and other
 switching applications.

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                                                                                                                          D




                                                                                                            G
          D
           G
            S
                          TO-92                                                                                           S
                          2N7000
                                                                 (TO-236AB)
                                                              2N7002/NDS7002A



Absolute Maximum Ratings                             TA = 25

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