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                                                                                                                                March 1998



  FDT459N
  N-Channel Enhancement Mode Field Effect Transistor

  General Description                                                            Features

     These N-Channel enhancement mode power field effect                             6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V
     transistors are produced using Fairchild's proprietary, high                                 RDS(ON) = 0.055  @ VGS = 4.5 V.
     cell density, DMOS technology. This very high density
     process is especially tailored to minimize on-state resistance,                 High density cell design for extremely low RDS(ON).
     provide superior switching performance. These products are
     well suited to low voltage, low current applications such as                    High power and current handling capability in a widely used
     notebook computer power management, battery powered                             surface mount package.
     circuits, and DC motor control.




      SuperSOTTM-3                 SuperSOTTM-6           SuperSOTTM-8               SO-8                SOT-223                 SOIC-16




                                                            D                                                                     D




                                                    G       D               S                                            G                 S




  Absolute Maximum Ratings                        TA = 25oC unless otherwise noted
Symbol          Parameter                                                                            FDT459N                               Units
VDSS            Drain-Source Voltage                                                                    30                                  V
VGSS            Gate-Source Voltage - Continuous                                                        

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