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                                                                                                                                     July 1997




 FDC6304P
 Digital FET, Dual P-Channel
 General Description                                                                   Features

 These P-Channel enhancement mode field effect transistor are                            -25 V, -0.46 A continuous, -1.0 A Peak.
 produced using Fairchild's proprietary, high cell density, DMOS                                   RDS(ON) = 1.5  @ VGS= -2.7 V
 technology. This very high density process is tailored to minimize                                RDS(ON) = 1.1  @ VGS = -4.5 V.
 on-state resistance at low gate drive conditions. This device is
 designed especially for application in battery power applications                       Very low level gate drive requirements allowing direct
 such as notebook computers and cellular phones. This device                             operation in 3V circuits. VGS(th) < 1.5 V.
 has excellent on-state resistance even at gate drive voltages as
 low as 2.5 volts.                                                                       Gate-Source Zener for ESD ruggedness.
                                                                                         >6kV Human Body Model.




          SOT-23                    SuperSOTTM-6             SuperSOTTM-8                 SO-8                    SOT-223           SOIC-16

                                      Mark: .304




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 Absolute Maximum Ratings                          TA = 25oC unless other wise noted
Symbol         Parameter                                                                                 FDC6304P                             Units
VDSS           Drain-Source Voltage                                                                         -25                                V
VGSS           Gate-Source Voltage                                                                          -8                                 V
ID             Drain Current                  - Continuous                                                 -0.46                               A
                                              - Pulsed                                                      -1
PD             Maximum Power Dissipation                         (Note 1a)                                  0.9                                W
                                                                 (Note 1b)                                  0.7
TJ,TSTG        Operating and Storage Temperature Range                                                   -55 to 150                            

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