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                                                                                                                                     November 1998




  FDG6320C
  Dual N & P Channel Digital FET
  General Description                                                                   Features

  These dual N & P-Channel logic level enhancement mode                                     N-Ch 0.22 A, 25 V, RDS(ON) = 4.0  @ VGS= 4.5 V,
  field effect transistors are produced using Fairchild's                                                         RDS(ON) = 5.0  @ VGS= 2.7 V.
  proprietary, high cell density, DMOS technology. This very
  high density process is especially tailored to minimize                                   P-Ch -0.14 A, -25V, RDS(ON) = 10  @ VGS= -4.5V,
  on-state resistance. This device has been designed                                                               RDS(ON) = 13  @ VGS= -2.7V.
  especially for low voltage applications as a replacement for
  bipolar digital transistors and small signal MOSFETS. Since                               Very small package outline SC70-6.
  bias resistors are not required, this dual digital FET can
  replace several different digital transistors, with different bias                        Very low level gate drive requirements allowing direct
  resistor values.                                                                          operation in 3 V circuits (VGS(th) < 1.5 V).
                                                                                            Gate-Source Zener for ESD ruggedness
                                                                                            (>6kV Human Body Model).




         SC70-6                          SOT-23                   SuperSOTTM-6              SOT-8                    SO-8                SOIC-14




                                                 S2
                                                                                                       1                       6
                                       G2
                              D1                  .20
                                                                                                       2                       5

                                                                  D2
                                         pin 1
                                                             G1                                        3                       4
                    SC70-6                              S1



   Absolute Maximum Ratings                             TA = 25oC unless other wise noted
 Symbol            Parameter                                                                N-Channel                       P-Channel           Units

 VDSS              Drain-Source Voltage                                                          25                            -25                 V

 VGSS              Gate-Source Voltage                                                           8                             -8                  V
 ID                Drain Current         - Continuous                                           0.22                          -0.14                A
                                             - Pulsed                                           0.65                          -0.4
 PD                Maximum Power Dissipation                         (Note 1)                                  0.3                                 W
 TJ,TSTG           Operating and Storage Temperature Ranger                                                 -55 to 150                             

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