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                                                                                                                                     March 1998




  FDN337N
  N-Channel Logic Level Enhancement Mode Field Effect Transistor
  General Description                                                                      Features
                  TM
     SuperSOT -3 N-Channel logic level enhancement mode                                      2.2 A, 30 V, RDS(ON) = 0.065  @ VGS = 4.5 V
     power field effect transistors are produced using Fairchild's                                           RDS(ON) = 0.082  @ VGS = 2.5 V.
     proprietary, high cell density, DMOS technology. This very
     high density process is especially tailored to minimize                                 Industry standard outline SOT-23 surface mount
     on-state resistance. These devices are particularly suited for                          package using proprietary SuperSOTTM-3 design for
     low voltage applications in notebook computers, portable                                superior thermal and electrical capabilities.
     phones, PCMCIA cards, and other battery powered circuits
                                                                                             High density cell design for extremely low RDS(ON).
     where fast switching, and low in-line power loss are needed
     in a very small outline surface mount package.                                          Exceptional on-resistance and maximum DC current
                                                                                             capability.




           SOT-23                   SuperSOTTM-6                 SuperSOTTM-8               SO-8                     SOT-223           SOIC-16




                            D                                                                                           D

                                             3   37

                                                            S

             SuperSOT -3
                              TM             G                                                             G                   S




  Absolute Maximum Ratings                             TA = 25oC unless other wise noted
Symbol          Parameter                                                                                FDN337N                               Units
VDSS            Drain-Source Voltage                                                                           30                                  V
VGSS            Gate-Source Voltage - Continuous                                                               

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