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                                                                                                                                   March 1998




  FDN357N
  N-Channel Logic Level Enhancement Mode Field Effect Transistor
  General Description                                                                   Features

     SuperSOTTM-3 N-Channel logic level enhancement mode power                            1.9 A, 30 V, RDS(ON) = 0.090  @ VGS = 4.5 V
     field effect transistors are produced using Fairchild's                                              RDS(ON) = 0.060  @ VGS = 10 V.
     proprietary, high cell density, DMOS technology. This very high
     density process is especially tailored to minimize on-state                          Industry standard outline SOT-23 surface mount
     resistance. These devices are particularly suited for low voltage                    package using proprietary SuperSOTTM-3 design for
     applications in notebook computers, portable phones, PCMCIA                          superior thermal and electrical capabilities.
     cards, and       other battery powered circuits where fast
                                                                                          High density cell design for extremely low RDS(ON).
     switching, and low in-line power loss are needed in a very small
     outline surface mount package.                                                       Exceptional on-resistance and maximum DC current
                                                                                          capability.




          SOT-23                   SuperSOTTM-6              SuperSOTTM-8                SO-8                     SOT-223            SOIC-16




                                       D                                                                             D

                                                     7
                                                   35
                                                               S

                       SuperSOT -3
                                         TM         G                                                    G                  S




  Absolute Maximum Ratings                          TA = 25oC unless other wise noted
Symbol          Parameter                                                                              FDN357N                                  Units
VDSS            Drain-Source Voltage                                                                         30                                  V
VGSS            Gate-Source Voltage - Continuous                                                             

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