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fdp7030l


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                                                                                                                                     April 1998




 FDP7030L / FDB7030L
 N-Channel Logic Level Enhancement Mode Field Effect Transistor
 General Description                                                            Features

     These N-Channel logic level enhancement mode power field                       100 A, 30 V. RDS(ON) = 0.007  @ VGS=10 V
     effect transistors are produced using Fairchild's proprietary,                              RDS(ON) = 0.010  @ VGS=5 V.
     high cell density, DMOS technology. This very high density                     Critical DC electrical parameters specified at elevated
     process is especially tailored to minimize on-state resistance.                temperature.
     These devices are particularly suited for low voltage
     applications such as DC/DC converters and high efficiency                      Rugged internal source-drain diode can eliminate the need
     switching circuits where fast switching, low in-line power                     for an external Zener diode transient suppressor.
     loss, and resistance to transients are needed.
                                                                                    High density cell design for extremely low RDS(ON).
                                                                                    175



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