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                                                                                                                          April 1998




 FDS6680
 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
 General Description                                                                 Features
  This N-Channel Logic Level MOSFET has been designed                                  11.5 A, 30 V. RDS(ON) = 0.010  @ VGS = 10 V
  specifically to improve the overall efficiency of DC/DC                                              RDS(ON) = 0.015  @ VGS = 4.5 V.
  converters using either synchronous or conventional
  switching PWM controllers.                                                           Optimized for use in switching DC/DC converters with
  The MOSFET features faster switching and lower gate                                  PWM controllers.
  charge than other MOSFETs with comparable RDS(ON)
  specifications.                                                                      Very fast switching.
  The result is a MOSFET that is easy and safer to drive (even                         Low gate charge (typical Qg = 19 nC).
  at very high frequencies), and DC/DC power supply designs
  with higher overall efficiency.




        SOT-23                    SuperSOTTM-6         SuperSOTTM-8                  SO-8               SOT-223                SOIC-16




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  Absolute Maximum Ratings                       TA = 25oC unless other wise noted
Symbol          Parameter                                                                            FDS6680                             Units
VDSS            Drain-Source Voltage                                                                    30                                V
VGSS            Gate-Source Voltage                                                                     

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