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                                                                                                                                             July 1998




  FDS8928A
  Dual N & P-Channel Enhancement Mode Field Effect Transistor
  General Description                                                              Features
   These dual N- and P -Channel enhancement mode power
                                                                                       N-Channel 5.5 A,30 V, RDS(ON)=0.030  @ VGS=4.5 V
   field effect transistors are produced using Fairchild's
   proprietary, high cell density, DMOS technology. This very                                                RDS(ON)=0.038  @ VGS=2.5 V.
   high density process is especially tailored to minimize                             P-Channel -4 A,-20 V, RDS(ON)=0.055  @ VGS=-4.5 V
   on-state resistance and provide superior switching                                                        RDS(ON)=0.072  @ VGS=-2.5 V.
   performance. These devices are particularly suited for low
   voltage applications such as notebook computer power                                High density cell design for extremely low RDS(ON).
   management and other battery powered circuits where fast
                                                                                       High power and current handling capability in a widely used
   switching, low in-line power loss, and resistance to
                                                                                       surface mount package.
   transients are needed.
                                                                                       Dual (N & P-Channel) MOSFET in surface mount package.




          SOT-23                    SuperSOTTM-6             SuperSOTTM-8                 SO-8                  SOT-223                  SOIC-16




                                   D2                                                                5                               4
                            D2
                      D1                   S
                D1                      FD 8A                                                        6                               3
                                           2
                                         89
                                                                                                     7                               2
                                                                G2
                                                           S2                                        8                              1
                                                      G1
                    SO-8                 pin 1
                                                 S1



 Absolute Maximum Ratings                             T A = 25

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