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                                                                                                                                         May 1998




  FDS8934A
  Dual P-Channel Enhancement Mode Field Effect Transistor
  General Description                                                                   Features

     SO-8 P-Channel enhancement mode power field effect                                    -4 A , -20 V, RDS(ON) = 0.055  @ VGS = -4.5 V,
     transistors are produced using Fairchild's proprietary, high                                        RDS(ON) = 0.072  @ VGS = -2.5 V.
     cell density, DMOS technology. This very high density
     process is especially tailored to minimize on-state resistance                        High density cell design for extremely low RDS(ON).
     and provide superior switching performance. These devices
     are particularly suited for low voltage applications such as                          High power and current handling capability in a widely
     notebook computer power management and other battery                                  used surface mount package.
     powered circuits where fast switching, low in-line power loss,                        Dual MOSFET in surface mount package.
     and resistance to transients are needed.




         SOT-23                    SuperSOTTM-6                SuperSOTTM-8              SO-8                 SOT-223                SOIC-16




                                  D2
                            D2                                                                      5                                4
                      D1                 S
                D1
                                      FD 4A
                                         3                                                          6                                3
                                       89
                                                               G2                                   7                                2
                                                          S2
                                                     G1                                             8                                1
                    SO-8                pin 1
                                                S1



  Absolute Maximum Ratings                           TA = 25oC unless otherwise noted
Symbol          Parameter                                                                               FDS8934A                                 Units
VDSS            Drain-Source Voltage                                                                        -20                                   V
VGSS            Gate-Source Voltage                                                                          -8                                   V
ID              Drain Current - Continuous                           (Note 1a)                               -4                                   A
                                  - Pulsed                                                                  -20
PD              Power Dissipation for Dual Operation                                                         2                                    W
                Power Dissipation for Single Operation              (Note 1a)                               1.6
                                                                    (Note 1b)                                1
                                                                    (Note 1c)                               0.9
TJ,TSTG         Operating and Storage Temperature Range                                                  -55 to 150                               

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