Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor irfm120a
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download irfm120a documenatation <<
Text preview - extract from the document
Advanced Power MOSFET IRFM120A
FEATURES
IEEE802.3af Compatible
BVDSS = 100 V
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
RDS(on) = 0.2 !
! Lower Input Capacitance ID = 2.3 A
! Improved Gate Charge
! Extended Safe Operating Area
SOT-223
! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V
! Lower RDS(ON) : 0.155 ! (Typ.) 2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
Continuous Drain Current (TA=25%) 2.3
ID A
Continuous Drain Current (TA=70%) 1.84
IDM Drain Current-Pulsed & 18 A
VGS Gate-to-Source Voltage "20 V
EAS Single Pulsed Avalanche Energy ' 123 mJ
IAR Avalanche Current & 2.3 A
EAR Repetitive Avalanche Energy & 0.24 mJ
dv/dt Peak Diode Recovery dv/dt ( 6.5 V/ns
PD Total Power Dissipation (TA=25%) * 2.4 W
Linear Derating Factor * 0.019 W/%
Operating Junction and
TJ , TSTG - 55 to +150
Storage Temperature Range
%
Maximum Lead Temp. for Soldering
TL 300
Purposes, 1/8" from case for 5-seconds
Thermal Resistance
Symbol Characteristic Typ. Max. Units
R$JA Junction-to-Ambient * -- 52 %/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
N-CHANNEL
IRFM120A POWER MOSFET
Electrical Characteristics (TA=25% unless otherwise specified)
Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250#A
.BV/.TJ Breakdown Voltage Temp. Coeff. -- 0.12 -- V/% ID=250#A See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250#A
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 1 VDS=30V -
IDSS #A VDS=100V
Drain-to-Source Leakage Current -- -- 10
-- -- 100 VDS=80V,TA=125%
Static Drain-Source
RDS(on) -- -- 0.2 ) VGS=10V,ID=1.15A +
On-State Resistance
gfs Forward Transconductance -- 3.12 -- S VDS=40V,ID=1.15A +
Ciss Input Capacitance -- 370 480
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 95 110 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 38 45
td(on) Turn-On Delay Time -- 14 40
VDD=50V,ID=9.2A,
tr Rise Time -- 14 40
ns RG=18)
td(off) Turn-Off Delay Time -- 36 90
See Fig 13 +,
tf Fall Time -- 28 70
Qg Total Gate Charge -- 16 22 VDS=80V,VGS=10V,
Qgs Gate-Source Charge -- 2.7 -- nC ID=9.2A
Qgd Gate-Drain("Miller") Charge -- 7.8 -- See Fig 6 & Fig 12 + ,
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 2.3 Integral reverse pn-diode
A
ISM Pulsed-Source Current & -- -- 18 in the MOSFET
VSD Diode Forward Voltage + -- -- 1.5 V TJ=25%,IS=2.3A,VGS=0V
trr Reverse Recovery Time -- 98 -- ns TJ=25%,IF=9.2A
Qrr Reverse Recovery Charge -- 0.34 -- #C diF/dt=100A/#s +
Notes ;
& Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
' L=35mH, IAS=2.3A, VDD=25V, RG=27), Starting TJ =25%
( ISD*9.2A, di/dt*300A/#s, VDD*BVDSS , Starting TJ =25%
+ Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%
, Essentially Independent of Operating Temperature
- Adjusted for Cisco
N-CHANNEL
POWER MOSFET IRFM120A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15V
10 V
8.0 V
11
0
11
0 7.0 V
ID , Drain Current [A]
ID , Drain Current [A]
6.0 V
5.5V
5.0 V
Bottom : 4.5V
1 0 oC
5
10
0
10
0 2 oC
5 @Nts:
oe
1 V =0V
. GS
@Nts:
oe 2 V =4 V
. DS 0
1 20" PleTs
. 5 s us et
- 5 oC
5 3 20" PleTs
. 5 s us et
2 T = 2 oC
. A 5
-1
10
1 -1
0 10
0 11
0 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
04
.
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
V =1 V
0 11
0
03
. GS
RDS(on) , [ #]
02
.
10
0
V =2 V
GS 0
01
.
@Nts:
oe
1 0 oC
5 1 V =0V
. GS
o
@Nt :T =2 C
oe J 5 2 oC
5 2 20" PleTs
. 5 s us et
00
. 1 -1
0
0 10 20 30 40 04. 06
. .
08 .
10 12
. 14
. .
16 18
. 20
. 22
.
ID , Drain Current [A] VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
60
0
C =C +C (C =sotd)
iss gs gd ds h r e
C =C +C V =2 V
DS 0
C iss oss ds gd
C =C 10
rss gd V =5 V
0
DS
VGS , Gate-Source Voltage [V]
Capacitance [pF]
40
0 V =8 V
DS 0
C oss
5
@Nts:
oe
20
0 1 V =0V
. GS
C rss
2 f=1Mz
. H
@Nts:I =92A
oe D .
00 0
10 11
0 0 5 10 15 20
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRFM120A POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage 12
. 30
.
25
.
Drain-Source On-Resistance
BVDSS , (Normalized)
RDS(on) , (Normalized)
11
.
20
.
10
. 15
.
10
.
09
. @Nts:
oe @Nts:
oe
1 V =0V
. GS 1 V =1 V
. GS 0
05
.
2 I =20"
. D 5 A 2 I =46A
. D .
08
. 00
.
7
-5 -0
5 -5
2 0 25 50 75 10
0 15
2 10
5 15
7 -5
7 5
-0 -5
2 0 25 50 75 10
0 15
2 10
5 15
7
TJ , Junction Temperature [oC] TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Ambient Temperature
25
.
12
0
Oeaini Ti Ae
prto n hs ra
i L m t d b R DS(on)
s iie y
20
.
ID , Drain Current [A]
ID , Drain Current [A]
1 "
0 s
11
0 10"
0 s
1ms 15
.
1 m
0 s
10m
0 s
10
0
DC 10
.
@Nts:
oe
1 -1
0 1 T = 2 oC
. A 5 05
.
2 T = 1 0 oC
. J 5
3 Snl Ple
. ige us
1 -2 -1
0 00
.
10 10
0 11
0 12
0 25 50 75 0
10 2
15 5
10
VDS , Drain-Source Voltage [V] TA , Ambient Temperature [oC]
Fig 11. Thermal Response
102
Thermal Response
D=0.5
101 0.2
@ Notes :
0.1
1. Z! A (t)=52 o C/W Max.
J
0.05 2. Duty Factor, D=t1 /t2
3. TJ M -TA =PD M *Z! A (t)
J
0.02
100
(t) ,
0.01
PDM
t1
Z JA
!
single pulse t2
10- 1
10- 5 10- 4 10- 3 10- 2 10- 1 100 101 102 103
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET IRFM120A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator "
VGS
Same Type
50K! as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Charge
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
1 BVDSS
LL EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS
RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRFM120A POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
--
IS
L
Driver
VGS
RG Same Type
as DUT VDD
VGS ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo