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Advanced Power MOSFET                                                  IRLS640A
 FEATURES
                                                                 BVDSS = 200 V
 ! Logic-Level Gate Drive
 ! Avalanche Rugged Technology
                                                                 RDS(on) = 0.18 
 ! Rugged Gate Oxide Technology                                  ID = 9.8 A
 ! Lower Input Capacitance
 ! Improved Gate Charge
                                                                  TO-220F
 ! Extended Safe Operating Area
 ! Lower Leakage Current : 10 A (Max.) @ VDS = 200V
 ! Lower RDS(ON) : 0.145 (Typ.)
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                                                                  1.Gate 2. Drain 3. Source

 Absolute Maximum Ratings
   Symbol                     Characteristic                    Value                 Units
     VDSS      Drain-to-Source Voltage                           200                       V
               Continuous Drain Current (TC=25)                  9.8
      ID                                                                                   A
               Continuous Drain Current (TC=100)                 6.2
     IDM       Drain Current-Pulsed                               63                       A
     VGS       Gate-to-Source Voltage                            

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