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N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power field
2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 V
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology.This very high density RDS(ON) = 0.16 @ VGS = 10 V.
process is especially tailored to minimize on-state resistance, High density cell design for extremely low RDS(ON).
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation High power and current handling capability in a widely used
modes.Thesedevices are particularly suited for low voltage surface mount package.
applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss, and
resistance to transients are needed.
G D S G S
Absolute Maximum Ratings T A = 25
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