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N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V.
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high High density cell design for extremely low RDS(ON).
density process is especially tailored to minimize High power and current handling capability in a widely used
on-state resistance and provide superior switching surface mount package.
performance. These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D D D D
G G D S G S
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter NDT3055 Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage - Continuous
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