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                                                                                                                                      May 1998



  NDT3055
  N-Channel Enhancement Mode Field Effect Transistor

  General Description                                                               Features

     These N-Channel enhancement mode power field effect                               4 A, 60 V. RDS(ON) = 0.100  @ VGS = 10 V.
     transistors are produced using Fairchild's proprietary,
     high cell density, DMOS technology. This very high                                High density cell design for extremely low RDS(ON).
     density process is especially tailored to minimize                                High power and current handling capability in a widely used
     on-state resistance and provide superior switching                                surface mount package.
     performance. These devices are particularly suited for
     low voltage applications such as DC motor control and
     DC/DC conversion where fast switching, low in-line
     power loss, and resistance to transients are needed.




     SuperSOTTM-3                 SuperSOTTM-6              SuperSOTTM-8                  SO-8               SOT-223                 SOIC-16




      D                                                     D                         D                                              D




                                             S                                                                    S
                                    D
                            G                      G         D                 S                                            G                   S
          SOT-223                                                                                    G
                                                                                   SOT-223*
                                                                                     (J23Z)



  Absolute Maximum Ratings                         TA = 25oC unless otherwise noted
Symbol          Parameter                                                                                NDT3055                                Units
VDSS            Drain-Source Voltage                                                                         60                                     V
VGSS            Gate-Source Voltage - Continuous                                                            

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