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                                                                                                                                August 1998

 N-Channel Logic Level Enhancement Mode Field Effect Transistor
 General Description                                                             Features

 These logic level N-Channel enhancement mode power                                4 A, 60 V. RDS(ON) = 0.100  @ VGS = 10 V,
 field effect transistors are produced using Fairchild's                                     RDS(ON) = 0.120  @ VGS = 4.5 V.
 proprietary, high cell density, DMOS technology. This
 very high density process is especially tailored to                               Low drive requirements allowing operation directly from logic
 minimize on-state resistance and provide superior                                 drivers. VGS(TH) < 2V.
 switching performance, and withstand high energy pulse
 in the avalanche and commutation modes. These devices                             High density cell design for extremely low RDS(ON).
 are particularly suited for low voltage applications such as                      High power and current handling capability in a widely used
 DC motor control and DC/DC conversion where fast                                  surface mount package.
 switching, low in-line power loss, and resistance to
 transients are needed.

      SuperSOTTM-3                 SuperSOTTM-6              SuperSOTTM-8                 SO-8                  SOT-223                SOIC-16

                                                                  D                                                                D
      D                                                                               D

                                             S                                                                       S
                                                       G          D          S
                                                                                      SOT-223*      G                     G                      S

 Absolute Maximum Ratings                          TA = 25oC unless otherwise noted
Symbol         Parameter                                                                              NDT3055L                               Units
VDSS           Drain-Source Voltage                                                                        60                                        V
VGSS           Gate-Source Voltage - Continuous                                                            

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