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                                                                                                                                          June 1996

     P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                          Features

     Power SOT P-Channel enhancement mode power field effect                        -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V
     transistors are produced using Fairchild's proprietary, high cell                           RDS(ON) = 0.07 @ VGS = -6V
     density, DMOS technology. This very high density process is                                 RDS(ON) = 0.09 @ VGS = -4.5V.
     especially tailored to minimize on-state resistance and provide                High density cell design for extremely low RDS(ON).
     superior switching performance. These devices are particularly
                                                                                    High power and current handling capability in a widely used
     suited for low voltage applications such as notebook computer
                                                                                    surface mount package.
     power management and other battery powered circuits where
     fast switching, low in-line power loss, and resistance to
     transients are needed.



                                                  G        D                S
                                                                                                                        G                    S

Absolute Maximum Ratings                      T A = 25

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