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Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This High density cell design for low RDS(ON).
very high density process has been designed to minimize Proprietary SuperSOTTM-6 package design using copper
on-state resistance, provide rugged and reliable lead frame for superior thermal and electrical capabilities.
performance and fast switching. These devices is
particularly suited for low voltage applications requiring a High saturation current.
low current high side switch.
Absolute Maximum Ratings T A = 25
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