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                                                                                                                                       October 1996

     NDP5060L / NDB5060L
     N-Channel Logic Level Enhancement Mode Field Effect Transistor

     General Description                                                          Features
     These logic level N-Channel enhancement mode power                               26 A, 60 V. RDS(ON) = 0.05  @ VGS= 5 V
     field effect transistors are produced using Fairchild's                                      RDS(ON) = 0.035  @ VGS= 10 V.
     proprietary, high cell density, DMOS technology. This
                                                                                      Critical DC electrical parameters specified at elevated
     very high density process has been especially tailored                           temperature.
     to minimize on-state resistance, provide superior
     switching performance, and withstand high energy                                 Rugged internal source-drain diode can eliminate the need
     pulses in the avalanche and commutation modes.                                   for an external Zener diode transient suppressor.
     These devices are particularly suited for low voltage

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