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                                                                                                                                             April 1996

  NDP6060L / NDB6060L
  N-Channel Logic Level Enhancement Mode Field Effect Transistor
     General Description                                                           Features

     These logic level N-Channel enhancement mode power                                48A, 60V. RDS(ON) = 0.025 @ VGS = 5V.
     field effect transistors are produced using Fairchild's                           Low drive requirements allowing operation directly from logic
     proprietary, high cell density, DMOS technology. This                             drivers. VGS(TH) < 2.0V.
     very high density process has been especially tailored to
     minimize on-state resistance, provide superior switching                          Critical DC electrical parameters specified at elevated
     performance, and withstand high energy pulses in the                              temperature.
     avalanche and commutation modes. These devices are                                Rugged internal source-drain diode can eliminate the need
     particularly suited for low voltage applications such as                          for an external Zener diode transient suppressor.
     automotive, DC/DC converters, PWM motor controls,
     and other battery powered circuits where fast switching,                          175

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