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NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 75A, 60V. RDS(ON) = 0.013 @ VGS=10V.
transistors are produced using Fairchild's proprietary, high cell
Critical DC electrical parameters specified at elevated
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need
pulses in the avalanche and commutation modes. These for an external Zener diode transient suppressor.
devices are particularly suited for low voltage applications such
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