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                                                                                                                                March 1996

 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description                                                         Features

These N-Channel logic level enhancement mode power field                       1.6A, 30V. RDS(ON) = 0.125 @ VGS = 4.5V.
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density                     Proprietary package design using copper lead frame for
process is especially tailored to minimize on-state resistance.                superior thermal and electrical capabilities.
These devices are particularly suited for low voltage
                                                                               High density cell design for extremely low RDS(ON).
applications in notebook computers, portable phones, PCMICA
cards, and other battery powered circuits where fast switching,                Exceptional on-resistance and maximum DC current
and low in-line power loss are needed in a very small outline                  capability.
surface mount package.
                                                                               Compact industry standard SOT-23 surface mount


                                                                                           G                   S

Absolute Maximum Ratings                       T A = 25

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