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Single P-Channel Enhancement Mode Field Effect Transistor
General Description Features
SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V
transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V.
density, DMOS technology. This very high density process is
High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly High power and current handling capability in a widely used
suited for low voltage applications such as notebook computer surface mount package.
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Absolute Maximum Ratings T A = 25
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