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nds8958


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                                                                                                                                  July 1996



     NDS8958
     Dual N & P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                  Features

     These dual N- and P-Channel enhancement mode power field                N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V.
     effect transistors are produced using Fairchild's proprietary,
                                                                             P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V.
     high cell density, DMOS technology. This very high density
     process is especially tailored to minimize on-state resistance          High density cell design or extremely low RDS(ON).
     and provide superior switching performance. These devices
     are particularly suited for low voltage applications such as            High power and current handling capability in a widely used
     notebook computer power management and other battery
     powered circuits where fast switching, low in-line power loss,          surface mount package.
     and resistance to transients are needed.
                                                                             Dual (N & P-Channel) MOSFET in surface mount package.

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Absolute Maximum Ratings                       T A= 25



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