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                                                                                                                                        March 1996

     Dual P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                            Features

     These P-Channel enhancement mode power field effect                                -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V
     transistors are produced using Fairchild's proprietary,                                         RDS(ON) = 0.1 @ VGS = -2.7V.
     high cell density, DMOS technology. This very high
     density process is especially tailored to minimize on-state                        High density cell design for extremely low RDS(ON).
     resistance, provide superior switching performance, and
                                                                                        High power and current handling capability in a widely used
     withstand high energy pulses in the avalanche and
                                                                                        surface mount package.
     commutation modes. These devices are particularly
     suited for low voltage applications such as notebook                               Dual MOSFET in surface mount package.
     computer power management and other battery powered
     circuits where fast switching, low in-line power loss, and
     resistance to transients are needed.


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Absolute Maximum Ratings                            T A = 25

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