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Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V
transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V.
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide High density cell design for extremely low RDS(ON).
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer High power and current handling capability in a widely used
power management and other battery powered circuits where surface mount package.
fast switching, low in-line power loss, and resistance to Dual MOSFET in surface mount package.
transients are needed.
Absolute Maximum Ratings T A= 25
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