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                                                                                                                            February 1996

     Single P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                  Features
     These P-Channel enhancement mode power field effect                      -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.
     transistors are produced using Fairchild's proprietary, high cell
     density, DMOS technology. This very high density process is              High density cell design for extremely low RDS(ON).
     especially tailored to minimize on-state resistance, provide
                                                                              High power and current handling capability in a widely used
     superior switching performance, and withstand high energy
                                                                              surface mount package.
     pulses in the avalanche and commutation modes. These
     devices are particularly suited for low voltage applications such        Rugged and reliable.
     as notebook computer power management and other battery
     powered circuits where fast switching, low in-line power loss,
     and resistance to transients are needed.


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Absolute Maximum Ratings                       T A= 25

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