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Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V,
transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V.
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON).
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications High power and current handling capability in a widely
such as disk drive motor control, battery powered circuits used surface mount package.
where fast switching, low in-line power loss, and resistance
Dual MOSFET in surface mount package.
to transients are needed.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D2 5 4
D1 ND 45 6 3
G1 8 1
SO-8 pin 1
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter NDS9945 Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage
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