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                                                                                                                                      May 1998




  NDS9945
  Dual N-Channel Enhancement Mode Field Effect Transistor

  General Description                                                                     Features

     SO-8 N-Channel enhancement mode power field effect                                     3.5 A, 60 V. RDS(ON) = 0.100  @ VGS = 10 V,
     transistors are produced using Fairchild's proprietary, high                                       RDS(ON) = 0.200  @ VGS = 4.5 V.
     cell density, DMOS technology. This very high density
     process is especially tailored to provide superior switching                           High density cell design for extremely low RDS(ON).
     performance and minimize on-state resistance. These
     devices are particularly suited for low voltage applications                           High power and current handling capability in a widely
     such as disk drive motor control, battery powered circuits                             used surface mount package.
     where fast switching, low in-line power loss, and resistance
                                                                                            Dual MOSFET in surface mount package.
     to transients are needed.




         SOT-23                     SuperSOTTM-6              SuperSOTTM-8                 SO-8                SOT-223                SOIC-16




                                   D2                                                             5                              4
                             D2
                       D1                 S
                D1                      ND 45                                                     6                               3
                                         99
                                                                                                  7                               2
                                                                G2
                                                           S2
                                                      G1                                          8                              1
                    SO-8                 pin 1
                                                 S1



  Absolute Maximum Ratings                            TA = 25oC unless other wise noted
Symbol          Parameter                                                                                 NDS9945                                 Units
VDSS            Drain-Source Voltage                                                                          60                                   V
VGSS            Gate-Source Voltage                                                                          

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