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                                                                                                                              February 1996

     Dual P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                  Features
     These P-Channel enhancement mode power field effect                      -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.
     transistors are produced using Fairchild's proprietary, high
     cell density, DMOS technology. This very high density                    High density cell design for extremely low RDS(ON).
     process is especially tailored to minimize on-state resistance,
                                                                              High power and current handling capability in a widely used
     provide superior switching performance, and withstand high
                                                                              surface mount package.
     energy pulses in the avalanche and commutation modes.
     These devices are particularly suited for low voltage                    Dual MOSFET in surface mount package.
     applications such as notebook computer power management
      and other battery powered circuits where fast switching, low
     in-line power loss, and resistance to transients are needed.


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Absolute Maximum Ratings                       T A= 25

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