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                                                                                                                               February 1996

     Dual N & P-Channel Enhancement Mode Field Effect Transistor

     General Description                                                    Features

     These dual N- and P-channel enhancement mode power                        N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V.
     field effect transistors are produced using Fairchild's                   P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V.
     proprietary, high cell density, DMOS technology. This
     very high density process is especially tailored to                       High density cell design or extremely low RDS(ON).
     minimize on-state resistance, provide superior switching
     performance, and withstand high energy pulses in the                      High power and current handling capability in a widely used
     avalanche and commutation modes. These devices are                        surface mount package.
     particularly suited for low voltage applications such as
                                                                               Dual (N & P-Channel) MOSFET in surface mount package.
     notebook computer power management and other
     battery powered circuits where fast switching, low in-line
     power loss, and resistance to transients are needed.


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Absolute Maximum Ratings                        T A= 25

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