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Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V.
field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V.
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to High density cell design or extremely low RDS(ON).
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the High power and current handling capability in a widely used
avalanche and commutation modes. These devices are surface mount package.
particularly suited for low voltage applications such as
Dual (N & P-Channel) MOSFET in surface mount package.
notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Absolute Maximum Ratings T A= 25
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