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Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy High power and current handling capability in a widely used
pulses in the avalanche and commutation modes. These surface mount package.
devices are particularly suited for low voltage applications such
Dual MOSFET in surface mount package.
as DC motor control and DC/DC conversion where fast
switching, low in-line power loss, and resistance to transients
Absolute Maximum Ratings T A = 25
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