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                                                                                                                               February 1996

     Dual N-Channel Enhancement Mode Field Effect Transistor

     General Description                                                       Features

     These N-Channel enhancement mode power field effect                          2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V
     transistors are produced using Fairchild's proprietary, high cell
     density, DMOS technology. This very high density process is                  High density cell design for extremely low RDS(ON).
     especially tailored to minimize on-state resistance, provide
     superior switching performance, and withstand high energy                    High power and current handling capability in a widely used
     pulses in the avalanche and commutation modes. These                         surface mount package.
     devices are particularly suited for low voltage applications such
                                                                                  Dual MOSFET in surface mount package.
     as DC motor control and DC/DC conversion where fast
     switching, low in-line power loss, and resistance to transients
     are needed.


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Absolute Maximum Ratings                          T A = 25

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