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Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 5A, 30V. RDS(ON) = 0.05 @ VGS = 10V.
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly High power and current handling capability in a widely used
suited for low voltage applications such as DC/DC conversion, surface mount package.
disk drive motor control, and other battery powered circuits Dual MOSFET in surface mount package.
where fast switching, low in-line power loss, and resistance to
transients are needed.
Absolute Maximum Ratings T A = 25
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