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                                                                                                                                                    September 1999

      Dual N- and P-Channel Enhancement Mode Field Effect Transistor
       General Description                                                                             Features
       These dual N- and P-Channel enhancement mode power
                                                                                                           N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V
       field effect transistors are produced using Fairchild's
       propretary, high cell density, DMOS technology. This very                                                                    RDS(ON) = 0.095 @VGS = 4.5V.
       high density process is especially tailored to minimize
                                                                                                          P-Channel -3.5A,-30V.RDS(ON)= 0.085 @VGS = -10V
       on-state resistance and provide superior switching
       performance. These devices are particularly suited for                                                                      RDS(ON)= 0.190  @VGS = -4.5V.
       low voltage applications such as notebook computer
       power management and other battery powered circuits
       where fast switching, low in-line power loss, and
                                                                                                           High density cell design for extremely low RDS(ON).
       resistance to transients are needed.                                                                High power and current handling capability in a widely
                                                                                                           used surface mount package.
                                                                                                           Dual (N & P-Channel) MOSFET in surface mount


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