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Dual N- and P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These dual N- and P-Channel enhancement mode power
N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V
field effect transistors are produced using Fairchild's
propretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V.
high density process is especially tailored to minimize
P-Channel -3.5A,-30V.RDS(ON)= 0.085 @VGS = -10V
on-state resistance and provide superior switching
performance. These devices are particularly suited for RDS(ON)= 0.190 @VGS = -4.5V.
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
High density cell design for extremely low RDS(ON).
resistance to transients are needed. High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
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