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P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features
This P-Channel 2.5V specified MOSFET is produced -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V
using Fairchild's advanced PowerTrench process that
RDS(ON) = 0.100 @ VGS = -2.5 V
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance. Fast switching speed.
These devices have been designed to offer exceptional Low gate charge (7.2nC typical).
power dissipation in a very small footprint for
applications where the larger packages are impractical. High performance trench technology for extremely
Applications SuperSOTTM-6 package: small footprint (72% smaller
Load switch than standard SO-8); low profile (1mm thick).
D 1 6
D 3 4
SuperSOT -6 TM D
Absolute Maximum Ratings TA = 25
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