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SEMICONDUCTOR MJD117/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A I
FEATURES C J
DIM MILLIMETERS
High DC Current Gain.
D
A _
6.60 + 0.2
B _
6.10 + 0.2
: hFE=1000(Min.), VCE=-4V, IC=-1A. C _
5.0 + 0.2
D _ 0.2
1.10 +
B
Low Collector-Emitter Saturation Voltage. E _
2.70 + 0.2
F _
2.30 + 0.1
Straight Lead (IPAK, "L" Suffix) H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
Complementary to MJD112/L.
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
MAXIMUM RATING (Ta=25 ) 1 2 3
O _
0.90 + 0.1
P _
1.00 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT Q 0.95 MAX
1. BASE
Collector-Base Voltage VCBO -100 V 2. COLLECTOR
3. EMITTER
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
DC -2 DPAK
Collector Current IC A
Pulse -4
Base Current DC IB -50 mA
A I
C
Collector Power Ta=25 1.0 J
PC W
D
Dissipation Tc=25 20
DIM MILLIMETERS
B
Junction Temperature Tj 150 A _
6.60 + 0.2
_
B 6.10 + 0.2
_ 0.2
5.0 +
Q
C
K
Storage Temperature Range Tstg -55 150 D _
1.10 + 0.2
H P
E _
9.50 + 0.6
G _
E F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
C J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
B P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
R1 R2 2. COLLECTOR
3. EMITTER
= 10k = 0.6k
E
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
ICEO VCE=-50V, IB=0 - - -20
Collector Cut-off Current A
ICBO VCB=-100V, IE=0 - - -20
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA
VCE=-3V, IC=-0.5A 500 - -
DC Current Gain hFE
VCE=-3V, IC=-2A 1,000 12,000 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.0 V
Base-Emitter On Voltage VBE(ON) VCE=-3V, IC=-2A - - -2.8 V
Current Gain Bandwidth Product fT VCE=-10V, IC=0.75A, f=1MHz 25 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=0.1MHz - - 200 pF
2003. 3. 27 Revision No : 4 1/2
MJD117/L
h FE - I C VCE(sat) , V BE(sat) - I C
5k -10
VCE =-3V I C/IB =250
3k
-5
SATURATION VOLTAGE
DC CURRENT GAIN h FE
VCE(sat) , V BE(sat) (V)
-3
1k VBE(sat)
500 -1
300 VCE(sat)
-0.5
-0.3
100
50 -0.1
-0.01 -0.03 -0.1 -0.3 -1 -3 -5 -0.01 -0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A)
C ob - VCB P C - Ta
500 25
1 Tc=25 C
POWER DISSIPATION P C (W)
300 2 Ta=25 C
1
CAPACITANCE C ob (pF)
20
100 15
50 10
30
5
2
10 0
-0.1 -0.3 -1 -3 -10 -30 -50 0 50 100 150 200
COLLECTOR-BASE VOLTAGE VCB (V) CASE TEMPERATURE Ta ( C)
SAFE OPERATING AREA
-10
-5 I C MAX.(PULSED) *
10
I C MAX. 0◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo