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SEMICONDUCTOR MJE13004D
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION. A
B
HIGH VOLTAGE AND HIGH SPEED D
C
SWITCHING APPLICATION. E
F
FEATURES
G
Built-in Free Wheeling Diode
Suitable for Electrouic Ballast Application H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
G 2.9 MAX
CHARACTERISTIC SYMBOL RATING UNIT M
H 1.0 MAX
J 1.9 MAX
Collector-Base Voltage VCBO 700 V N
O
P
K _
0.75 + 0.15
1 2 3 L _
15.50 + 0.5
M _
2.3 + 0.1
Collector-Emitter Voltage VCEO 400 V N _
0.65 + 0.15
1. EMITTER O 1.6
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR P 3.4 MAX
3. BASE
DC IC 4
Collector Current A
Pulse ICP 8 TO-126
Base Current IB 2 A
Collector Power Dissipation
PC 30 W
(Tc=25 )
Equivalent Circuit
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 150
B
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEO VCE=400V - - 250 A
Collector Cut-off Current ICES VCE=700V, VEB=0V - - 100 A
Emitter Cut-off Current IEBO VEB=9V - - 100 A
hFE (1) VCE=5V, IC=10mA 10 - - -
DC Current Gain hFE (2) VCE=5V, IC=1A 20 - 40 -
hFE (3) VCE=5V, IC=2A 8 - 40 -
VCE(SAT) (1) IC=0.5A, IB=0.1A - - 0.7 V
Collector-Emitter Saturation Voltage VCE(SAT) (2) IC=1A, IB=0.2A - - 1.0 V
VCE(SAT) (3) IC=2.5A, IB=0.5A - - 1.5 V
VBE(SAT) (1) IC=0.5A, IB=0.1A - - 1.1 V
Base-Emitter Saturation Voltage VBE(SAT) (2) IC=1A, IB=0.2A - - 1.2 V
VBE(SAT) (3) IC=2.5A, IB=0.5A - - 1.3 V
Internal Diode Forward Voltage Drop VF IF=2A - - 2.5 V
Resistive Load Switching
Storage Time tstg VCC=200V,IC=2A, - - 2.9 S
Fall Time tf IB1=IB2=0.4A, TP=30 S - 0.2 - S
Inductive Load Switching
Storage Time tstg VCC=200V,IC=2A, IB1=0.4A, - 0.6 - S
Fall Time tf VBE(off)=-5V, L=30 H - 0.1 - S
2011. 3. 17 Revision No : 1 1/2
MJE13004D
IC - VCE hFE - IC
4
COLLECTOR CURRENT IC (A)
100
Ta=125 C VCE=5V
IB=500mA
DC CURRENT GAIN hFE
IB=400mA
3 IB=300mA
IB=200mA 25 C
IB=150mA -25 C
2 10
IB=100mA
IB=50mA
1
0 1
0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10
COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
10 I /I =5 1
C B
IC/IB=5
Ta=125 C
VOLTAGE VCE(sat) (V)
VOLTAGE VBE(sat) (V)
1
-25 C
-25 C
0.1
25 C
0.1
25 C Ta=125 C
0.01 0.01
0.01 0.1 1 10 0.01 0.1 1 10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10
COLLECTOR CURRENT IC (A)
IC MAX(PULSE)*
1ms
1
IC MAX(CONTINUOUS)
DC
0.1
* SINGLE NONREPETITIVE
0.01 PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARY WITH INCREASE
IN TEMPERATURE
0.001
1 10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2011. 3. 17 Revision No : 1 2/2
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