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SEMICONDUCTOR MJE13005D
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation. A
O
C
Suitable for half bridge light ballast Applications.
F
Low base drive requirement. DIM MILLIMETERS
E G A _
9.9 + 0.2
MAXIMUM RATING (Ta=25 ) B B 15.95 MAX
C 1.3+0.1/-0.05
Q
CHARACTERISTIC SYMBOL RATING UNIT D _
0.8 + 0.1
I E _
3.6 + 0.2
Collector-Base Voltage VCBO 800 V F _
2.8 + 0.1
K P 3.7
G
Collector-Emitter Voltage VCEO 400 V M H 0.5+0.1/-0.05
L
I 1.5
Emitter-Base Voltage VEBO 10 V J J _
13.08 + 0.3
D K 1.46
DC IC 5 N N H L _
1.4 + 0.1
Collector Current A M _
1.27+ 0.1
Pulse ICP 10 1 2 3
N _
2.54 + 0.2
O _
4.5 + 0.2
Base Current IB 2 A P _
2.4 + 0.2
1. BASE
Q _
9.2 + 0.2
Collector Power Dissipation (Tc=25 ) PC 75 W 1 2 3 2. COLLECTOR
3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Equivalent Circuit
C
TO-220AB
B
ELECTRICAL CHARACTERISTICS (Ta=25 ) E
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
hFE(1) VCE=5V, IC=1A 18 - 35
DC Current Gain
hFE(2) VCE=5V, IC=2A 8 - -
IC=1A, IB=0.2A - - 0.5
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.5A - - 0.6 V
IC=4A, IB=1A - - 1
IC=1A, IB=0.2A - - 1.2
Base-Emitter Saturation Voltage VBE(sat) V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=1MHz - 65 - pF
Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz
OUTPUT
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