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SEMICONDUCTOR MJE5555
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION. A
O
C
FLUORESCENT LIGHT BALLASTOR APPLICATION.
F
DIM MILLIMETERS
E G A _
9.9 + 0.2
FEATURES B B 15.95 MAX
C 1.3+0.1/-0.05
Excellent Switching Times Q
D _
0.8 + 0.1
I E _
3.6 + 0.2
: tstg=2.5 S(Max.), tf=0.3 S(Max.), at IC=2.5A
F _
2.8 + 0.1
High Collector Voltage : VCBO=1050V. K P 3.7
G
M H 0.5+0.1/-0.05
L
I 1.5
J J _
13.08 + 0.3
D K 1.46
N N H L _
1.4 + 0.1
M _
1.27+ 0.1
MAXIMUM RATING (Ta=25 ) N _
2.54 + 0.2
O _
4.5 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT P _
2.4 + 0.2
Q _
9.2 + 0.2
Collector-Base Voltage VCBO 1050 V
Collector-Emitter Voltage VCEO 400 V 1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO 12 V
DC IC 5
Collector Current A TO-220AB
Pulse ICP 10
Base Current IB 2.5 A
Collector Power Dissipation (Tc=25 ) PC 75 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=14V, IC=0 - - 10 A
hFE(1) VCE=5V, IC=10mA 10 - -
DC Current Gain
hFE(2) VCE=3V, IC=0.8A 20 - 40
IC=1A, IB=0.2A - - 0.5
Collector-Emitter Saturation Voltage VCE(sat) V
IC=3.5A, IB=1A - - 1.5
IC=3.5A, IB=1A - - 1.2
Base-Emitter Saturation Voltage VBE(sat) V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 45 - pF
OUTPUT
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