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SEMICONDUCTOR MMBTA517
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
E
L B L
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base Voltage VCBO 40 V P P
L 0.55
M 0.20 MIN
Collector-Emitter Voltage VCEO 30 V N 1.00+0.20/-0.10
N
C
P 7
J
Emitter-Base Voltage VEBO 10 V
M
K
Collector Current IC 400 mA
Collector Power Dissipation PC * 350 mW 1. EMITTER
2. BASE
Junction Temperature Tj 150 3. COLLECTOR
Storage Temperature Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA 10 - - V
Collector Cut-off Current ICBO VCB=40V - - 1 A
Emitter Cut-off Current IEBO VEB=10V - - 1 A
DC Current Gain hFE IC=100mA, VCE=2V 30K - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 1.5 2 V
Current Gain Bandwidth Product fT IC=100mA, f=100MHz, VCE=2V - 220 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 5 - pF
1999. 11. 30 Revision No : 3 1/2
MMBTA517
1999. 11. 30 Revision No : 3 2/2
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