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SEMICONDUCTOR MPSA62/63/64
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
B C
FEATURES
Complementary to MPSA13/14.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
C 3.70 MAX
MAXIMUM RATING (Ta=25 ) D
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base MPSA62 -20 H 0.45
VCBO V H J _
14.00 + 0.50
Voltage MPSA63/64 -30 F K 0.55 MAX
F
L 2.30
Collector-Emitter MPSA62 -20 M 0.45 MAX
VCES V N 1.00
C
Voltage MPSA63/64 -30 1 2 3
L
M
VEBO 1. EMITTER
Emitter-Base Voltage -10 V
2. BASE
3. COLLECTOR
Collector Current IC -500 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter MPSA62 -20 - -
V(BR)CES IC=-0.1mA, IB=0 V
Breakdown Voltage MPSA63/64 -30 - -
Collector Cut-off MPSA62 VCB=-15V, IE=0
ICBO - - -0.1 A
Current MPSA63/64 VCB=-30V, IE=0
Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -0.1 A
MPSA62 20,000 - -
MPSA63 IC=-10mA, VCE=-5V 5,000 - -
DC Current Gain MPSA64 hFE 10,000 - -
MPSA63 10,000 - -
IC=-100mA, VCE=-5V
MPSA64 20,000 - -
Collector-Emitter MPSA62 IC=-10mA, IB=-0.01mA - - -1.0
VCE(sat) V
Saturation Voltage MPSA63/64 IC=-100mA, IB=-0.1mA - - -1.5
MPSA62 IC=-10mA, VCE=-5V - - -1.4
Base Emitter Voltage VBE V
MPSA63/64 IC=-100mA, VCE=-5V - - -2.0
Current Gain
MPSA63/64 fT IC=-10mA, f=100MHz, VCE=-5V 125 - - MHz
Bandwith Product
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
1999. 11. 30 Revision No : 3 1/2
MPSA62/63/64
1999. 11. 30 Revision No : 3 2/2
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