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mpsa13_mpsa14


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                                  SEMICONDUCTOR                                                                       MPSA13/14
                                           TECHNICAL DATA                                         EPITAXIAL PLANAR NPN TRANSISTOR


  GENERAL PURPOSE APPLICATIONS.
  DARLINGTON TRANSISTOR.
                                                                                                          B                            C




                                                                                                                              A
                                                                                                                                           N     DIM    MILLIMETERS
                                                                                                                          E                       A      4.70 MAX
                                                                                                  K
                                                                                                                  G                               B      4.80 MAX
                                                                                                  D                                               C      3.70 MAX




                                                                                                                              J
                                                                                                                                                  D          0.45
                                                                                                                                                  E          1.00
  MAXIMUM RATING (Ta=25                )                                                                                                          F          1.27
                                                                                                                                                  G          0.85
              CHARACTERISTIC                SYMBOL                  RATING    UNIT                                                                H          0.45
                                                                                                              H                                   J            _
                                                                                                                                                         14.00 + 0.50
   Collector-Base Voltage                     VCBO                    30          V               F                   F                           K      0.55 MAX
                                                                                                                                                  L          2.30
   Collector-Emitter Voltage                  VCES                    30          V                                                               M      0.45 MAX
                                                                                                                                                  N         1.00




                                                                                                                              C
                                              VEBO                                                    1   2   3
   Emitter-Base Voltage                                               10          V




                                                                                              L




                                                                                                                          M
   Collector Current                               IC                 500         mA                                              1. EMITTER
                                                                                                                                  2. BASE
                                                   PC                                                                             3. COLLECTOR
   Collector Power Dissipation                                        625        mW
   Junction Temperature                            Tj                 150
   Storage Temperature Range                   Tstg                 -55 150                                                       TO-92




  ELECTRICAL CHARACTERISTICS (Ta=25                             )
               CHARACTERISTIC                      SYMBOL                        TEST CONDITION                       MIN.          TYP.         MAX.         UNIT
   Collector-Emitter Breakdown Voltage                   VCES          IC=0.1mA                                           30           -           -             V
   Emitter Cut-off Current                               ICBO          VCB=30V                                            -            -          100           nA
   Emitter Cut-off Current                               IEBO          VEB=10V                                            -            -          100           nA
                                  MPSA13                                                                              5,000            -           -
                                                                       IC=10mA, VCE=5V
                                  MPSA14                                                                          10,000               -           -
   DC Current Gain                                        hFE                                                                                                    -
                                  MPSA13                                                                          10,000               -           -
                                                                       IC=100mA, VCE=5V
                                  MPSA14                                                                          20,000               -           -
   Collector-Emitter Saturation Voltage                 VCE(sat)       IC=100mA, IB=0.1mA                                 -            -          1.5            V
   Base-Emitter Voltage                                  VBE           IC=100mA, VCE=5V                                   -            -          2.0            V
   Current Gain Bandwith Product                          fT           IC=10mA, f=100MHz, VCE=5V                      125              -           -           MHz




2000. 2. 26                      Revision No : 3                                                                                                                        1/2
                                MPSA13/14




2000. 2. 26   Revision No : 3               2/2



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