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SEMICONDUCTOR MPS8550
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE B C
Complementary to MPS8050.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
MAXIMUM RATING (Ta=25 )
D C 3.70 MAX
D 0.45
J
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
Collector-Base Voltage VCBO -40 V G 0.85
H 0.45
Collector-Emitter Voltage VCEO -25 V H J _
14.00 + 0.50
F F K 0.55 MAX
Emitter-Base Voltage VEBO -6 V L 2.30
M 0.45 MAX
Collector Current IC -1.5 A N 1.00
1 2 3
C
L
M
625
1. EMITTER
Collector Power Dissipation PC* mW 2. BASE
400 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TO-92
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V
hFE(1) VCE=-1V, IC=-5mA 45 170 -
DC Current Gain hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300
hFE(3) VCE=-1V, IC=-800mA 40 80 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V
Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 15 - pF
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
2010. 6. 10 Revision No : 3 1/2
MPS8550
I C - V CE h FE - I C
-0.5 1000
VCE =-1V
I B =-4.0mA
COLLECTOR CURRENT I (A)
-0.4 I B =-3.5mA
DC CURRENT GAIN h FE
C
I B =-3.0mA
-0.3 I B =-2.5mA
I B =-2.0mA 100
-0.2 I B =-1.5mA
I B =-1.0mA
-0.1
I B =-0.5mA
0 10
0 -0.4 -0.8 -1.2 -1.6 -2.0 0.1 1 10 100 1000 10000
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
I C - V BE
V BE(sat), VCE(sat) - I C
-100
VCE =-1V 10000
COLLECTOR CURRENT I C (mA)
-50 IC =10IB
-30
SATURATION VOLTAGE
VBE (sat)
V BE(sat), VCE(sat) (mV)
1000
-10
-5
-3
100
VCE (sat)
-1
-0.5
-0.3 10
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1
0.1 1 10 100 1000 10000
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
f T - IC C ob - V CB
COLLECTOR OUTPUT CAPACITANCE
300 100
TRANSITION FREQUENCY f T (MHz)
V CE =-10V f=1MHz
50 I E =0
30
100
C ob (pF)
10
50
30 5
3
10 1
-1 -3 -5 -10 -30 -50 -100 -300 -1 -3 -5 -10 -30 -50
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2010. 6. 10 Revision No : 3 2/2
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