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SEMICONDUCTOR MPS8050
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE B C
Complementary to MPS8550.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
MAXIMUM RATING (Ta=25 )
D C 3.70 MAX
D 0.45
J
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
Collector-Base Voltage VCBO 40 V G 0.85
H 0.45
Collector-Emitter Voltage VCEO 25 V H J _
14.00 + 0.50
F F K 0.55 MAX
Emitter-Base Voltage VEBO 6 V L 2.30
M 0.45 MAX
Collector Current IC 1.5 A N 1.00
1 2 3
C
L
M
625
1. EMITTER
Collector Power Dissipation PC* mW 2. BASE
400 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TO-92
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V
hFE(1) VCE=1V, IC=5mA 45 135 -
DC Current Gain hFE(2) (Note) VCE=1V, IC=100mA 85 160 300
hFE(3) VCE=1V, IC=800mA 40 110 -
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V
Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 9 - pF
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
2010. 6. 10 Revision No : 3 1/2
MPS8050
I C - V CE h FE - I C
0.5 1000
VCE =1V
COLLECTOR CURRENT I C (A)
I B=3.0mA
0.4
DC CURRENT GAIN h FE
I B=2.5mA
0.3 I B=2.0mA
100
I B=1.5mA
0.2
I B=1.0mA
0.1
I B=0.5mA
0 10
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000 10000
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
I C - V BE V BE(sat), VCE(sat) - I C
100 10000
VCE =1V IC =10IB
COLLECTOR CURRENT I C (mA)
50
30
SATURATION VOLTAGE
VBE (sat)
V BE(sat), VCE(sat) (mV)
1000
10
5
3 100
VCE (sat)
1
0.5 10
0.3
0.1 1
0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 10000
BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT IC (mA)
fT - IC C ob - V CB
COLLECTOR OUTPUT CAPACITANCE
300 100
TRANSITION FREQUENCY f T (MHz)
VCE =10V f=1MHz
50 I E =0
30
100
C ob (pF)
50 10
30 5
3
10 1
1 3 5 10 30 50 100 300 1 3 5 10 30 50
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2010. 6. 10 Revision No : 3 2/2
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