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SEMICONDUCTOR MPS8050S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE E
L B L
Complementary to MPS8550S.
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base Voltage VCBO 40 V P P
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
Collector-Emitter Voltage VCEO 25 V
P 7
N
C
J
Emitter-Base Voltage VEBO 6 V
M
K
Collector Current IC 1.5 A
PC * 1. EMITTER
Collector Power Dissipation 350 mW
2. BASE
Junction Temperature Tj 150 3. COLLECTOR
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
SOT-23
Marking
h FE Rank Lot No.
Type Name
BH
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V
hFE(1) VCE=1V, IC=5mA 45 135 -
DC Current Gain hFE(2) (Note) VCE=1V, IC=100mA 85 160 300
hFE(3) VCE=1V, IC=800mA 40 110 -
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V
Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 9 - pF
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
2003. 3. 25 Revision No : 1 1/2
MPS8050S
I C - V CE h FE - I C
0.5 1k
VCE =1V
COLLECTOR CURRENT I C (mA)
I B=3.0mA 500
DC CURRENT GAIN hFE
0.4
I B=2.5mA 300
0.3 I B=2.0mA
100
I B=1.5mA
0.2
50
I B=1.0mA
30
0.1
I B=0.5mA
0 10
0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
I C - VBE V BE(sat), VCE(sat) - I C
100 5k
VCE =1V IC =10I B
COLLECTOR CURRENT I C (mA)
50 3k
30
SATURATION VOLTAGE
V BE(sat), V CE(sat) (mV)
1k
10 VBE (sat)
500
5
300
3
1 100
0.5 50 VCE (sat)
0.3 30
0.1 10
0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 30 100 300 1K
BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA)
f T - IC C ob - VCB
COLLECTOR OUTPUT CAPACITANCE
300 100
TRANSITION FREQUENCY f T (MHz)
VCE =10V f=1MHz
50 I E =0
30
100
C ob (pF)
50 10
30 5
3
10 1
1 3 5 10 30 50 100 300 1 3 5 10 30 50
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2003. 3. 25 Revision No : 1 2/2
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