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SEMICONDUCTOR BC237/8/9
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
B C
FEATURES
High Voltage : BC237 VCEO=45V.
A
Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=6V, IC=0.1mA, f=1kHz). N DIM MILLIMETERS
E A 4.70 MAX
K
For Complementary With PNP type BC307/308/309. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
BC237 50 N 1.00
C
1 2 3
L
M
Collector-Base Voltage BC238 VCBO 30 V 1. COLLECTOR
2. BASE
BC239 30
3. EMITTER
BC237 45
Collector-Emitter Voltage BC238 VCEO 20 V
TO-92
BC239 20
BC237 6
Emitter-Base Voltage BC238 VEBO 5 V
BC239 5
BC237 100
Collector Current BC238 IC 100 mA
BC239 50
BC237 -100
Emitter Current BC238 IE -50 mA
BC239 -50
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1994. 3. 2 Revision No : 0 1/2
BC237/8/9
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 15 nA
BC237 120 - 460
DC Current Gain
BC238 hFE VCE=5V, IC=2mA 120 - 800
(Note)
BC239 180 - 800
BC237 - - 0.6
Collector-Emitter IC=100mA, IB=5mA
BC238 VCE(sat) - - 0.6 V
Saturation Voltage
BC239 IC=10mA, IB=0.5mA - - 0.2
BC237 - - 1.05
Base-Emitter IC=100mA, IC=5mA
BC238 VBE(sat) - - 1.05 V
Saturation Voltage
BC239 IC=10mA, IB=0.5mA - - 0.83
Base-Emitter Voltage VBE(ON) VCE=5V, IC=2mA 0.55 - 0.7 V
Transition Frequency fT VCE=5V, IC=10mA, f=100MHz 150 250 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF
BC237 - 1.0 10
VCE=6V, IC=0.1mA
Noise Figure BC238 NF - 1.0 10 dB
Rg=10k , f=1kHz
BC239 - 0.2 3.0
NOTE : According to the Value of hFE the BC237, BC238, BC239 are classified as follows.
CLASSIFICATION A B C
BC237 120 220 180 460 -
hFE BC238 120 220 180 460 380 800
BC239 - 180 460 380 800
1994. 3. 2 Revision No : 0 2/2
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